| 发明名称 |
VARIABLE RESISTANCE MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME |
| 摘要 |
A variable resistance memory device includes a semiconductor substrate having a vertical transistor with a shunt gate that increases an area of a gate of the vertical transistor. |
| 申请公布号 |
US2016204163(A1) |
申请公布日期 |
2016.07.14 |
| 申请号 |
US201615074913 |
申请日期 |
2016.03.18 |
| 申请人 |
SK hynix Inc. |
发明人 |
PARK Nam Kyun |
| 分类号 |
H01L27/24;H01L29/78;H01L45/00 |
主分类号 |
H01L27/24 |
| 代理机构 |
|
代理人 |
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| 主权项 |
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| 地址 |
Gyeonggi-do KR |
