SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD

摘要

A method includes forming a multilayered film including a conductive layer mainly containing aluminum, and a barrier metal layer formed thereon, forming a hard mask layer on the barrier metal layer, patterning a resist on the hard mask layer, patterning the hard mask layer by dry-etching the hard mask layer with the patterned resist as a mask, cleaning a surface of the barrier metal layer with a cleaning solution after the patterning the hard mask layer, and dry-etching the multilayered film with the patterned hard mask layer as a mask after the cleaning the surface of the barrier metal layer. In the patterning the hard mask layer, dry etching is performed with a ratio of a flow rate of an oxidizing gas to a total flow rate of a process gas at less than 1% in a state in which the barrier metal layer is exposed to the process gas.

主权项

1. A semiconductor device manufacturing method comprising:
forming a multilayered film including a conductive layer mainly containing aluminum, and a barrier metal layer formed on the conductive layer; forming a hard mask layer on the barrier metal layer; patterning a resist on the hard mask layer; patterning the hard mask layer by dry-etching the hard mask layer by using the patterned resist as a mask; cleaning a surface of the barrier metal layer with a cleaning solution after the patterning the hard mask layer; and dry-etching the multilayered film by using the patterned hard mask layer as a mask after the cleaning the surface of the barrier metal layer, wherein in the patterning the hard mask layer, dry etching is performed by setting a ratio of a flow rate of an oxidizing gas to a total flow rate of a process gas at less than 1% in a state in which the barrier metal layer is exposed to the process gas.