ASYMMETRIC HIGH-K DIELECTRIC FOR REDUCING GATE INDUCED DRAIN LEAKAGE

摘要

An asymmetric high-k dielectric for reduced gate induced drain leakage in high-k MOSFETs and methods of manufacture are disclosed. The method includes performing an implant process on a high-k dielectric sidewall of a gate structure. The method further includes performing an oxygen annealing process to grow an oxide region on a drain side of the gate structure, while inhibiting oxide growth on a source side of the gate structure adjacent to a source region.

主权项

1. A method comprising:
depositing a masking material on a source side of a gate structure; and performing an implant process on the gate structure to grow oxygen on a drain side of the gate structure, while the masking material inhibits oxide growth on the source side of the gate structure.