FINE PATTERNING METHOD OF SEMICONDUCTOR DEVICE

摘要

A polycrystalline silicon film(2) and a silicon nitride film(3) is formed on a substrate in succession. Then, the silicon nitride film is etched by a photolithography, the polycrystalline silicon film at the formed portion of the conducting line being exposed. An oxide film is deposited on an upper part of a whole structure, then being etched, and at the side wall of the silicon nitride film at the etched portion a spacer oxide film(4) being formed. A selective metal film(5) is deposited on the upper part of the polycrystalline silicon film which is exposed, then the spacer oxide film and silicon nitride film being removed, leaving only the selective metal film on the polycrystalline silicon film.