发明名称 Irradiation device for irradiating plants
摘要 A device is provided which ensures uniform irradiation of plants with infrared radiation along with ultraviolet and/or visible radiation and requires a small number of infrared emitters relative to the cultivation area. The infrared emitters are designed for temperatures of 800° C. to 1800° C. Each has a cylindrical emitter tube having a length of 50 mm to 500 mm. The emitter tubes extend parallel to one another in an emitter zone located above the culture plane. The infrared emitter occupation density relative to the area of the culture plane is between 0.2 m−2 and 1.0 m−2. Irradiation regions of adjacent infrared emitters on the culture plane overlap such that average irradiance on the culture plane is between 10 watt/m2 and 100 watt/m2 with a variation range of a maximum of 50%. A reflector facing a structural space is assigned to a top side of the emitter tube.
申请公布号 US9426947(B2) 申请公布日期 2016.08.30
申请号 US201314649931 申请日期 2013.12.06
申请人 Heraeus Noblelight GmbH 发明人 Weiss Oliver;Linow Sven
分类号 G21K5/04;A01G7/04 主分类号 G21K5/04
代理机构 Panitch Schwarze Belisario & Nadel LLP 代理人 Panitch Schwarze Belisario & Nadel LLP
主权项 1. An irradiation device for irradiating plants, the device comprising a carrier element defining a culture plane for cultivating the plants, multiple radiation sources for irradiating the plants with at least one of visible and ultraviolet irradiation, and multiple infrared emitters for irradiating the plants with infrared radiation, the infrared emitters being designed for a temperature from 800° C. to 1800° C. and each of the infrared emitters having a cylindrical emitter tube having an emitter tube length in a range from 50 mm to 500 mm and a reflector facing an installation space B allocated to a top side of the emitter tube, wherein the emitter tubes extend parallel to each other in an emitter zone Z lying above the culture plane, wherein a population density of the infrared emitters in relation to a surface area of the culture plane is in a range between 0.2 m−2 and 1.0 m−2, and wherein irradiation areas of adjacent ones of the infrared emitters overlap on the culture plane, such that an average irradiation intensity on the culture plane is between 10 W/m2 and 100 W/m2 with a maximum fluctuation range of 50%.
地址 Hanau DE
您可能感兴趣的专利