SEMICONDUCTOR DEVICE, DISPLAY DEVICE, AND ELECTRONIC APPARATUS INCLUDING THE DISPLAY DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device with a higher capacitance value and a higher opening ratio, which is manufactured at lower cost.SOLUTION: The semiconductor device includes a transistor, a first insulating film, and a capacitor including a second insulating film between a pair of electrodes. The transistor includes a gate electrode, a gate insulating film provided in contact with the gate electrode, a first oxide semiconductor film provided in contact with the gate insulating film and at a position overlapping with the gate electrode, and a source electrode and a drain electrode electrically connected to the first oxide semiconductor film. One of the pair of electrodes includes a second oxide semiconductor film. The first insulating film is provided on the first oxide semiconductor film, and the second insulating film is provided on the second oxide semiconductor film so that the second oxide semiconductor film is held by the first insulating film and the second insulating film.SELECTED DRAWING: Figure 1