| 摘要 |
PROBLEM TO BE SOLVED: To prevent the writing error and the wrong writing at the readout time.SOLUTION: A nonvolatile semiconductor memory according to an embodiment includes: a substrate region Sub(m-1); a cell unit CU-L in the substrate region Sub(m-1) including a memory cell MC and an access transistor AT which has a control terminal connected to a word line WL(i-1), uses the substrate region Sub(m-1) as a channel and supplies the readout current or the writing current to the memory cell MC; and a substrate potential generation circuit which sets the substrate region Sub(m-1) to a first substrate potential when the readout current is supplied to the memory cell MC, and sets the substrate region Sub(m-1) to a second substrate potential, which is different from the first substrate potential, when the writing current is supplied to the memory cell MC.SELECTED DRAWING: Figure 2 |
