HEAT DISSIPATION SUBSTRATE, SEMICONDUCTOR PACKAGE USING THE SAME, AND SEMICONDUCTOR MODULE

摘要

PROBLEM TO BE SOLVED: To provide a heat dissipation substrate material of CuMo or CuW which has the following characteristics: a maximum of a linear expansion coefficient is not more than 10 ppm/K at a temperature of room temperature or more and not more than 800°C and a heat conductivity is not less than 250 W/m K at a temperature of 200°C.SOLUTION: By cross-rolling a composite material of CuMo or CuW formed from a coarse material of Mo or a coarse material of W and Cu, there is provided a heat dissipation substrate material which the following characteristics: a maximum of a linear expansion coefficient is not more than 10 ppm/K at a temperature of room temperature or more and not more than 800°C and a heat conductivity is not less than 250 W/m K at a temperature of 200°C.SELECTED DRAWING: Figure 2