| 摘要 |
1,151,746. Silica coatings. MATSUSHITA ELECTRONICS CORP. 19 Dec., 1966 [27 Dec., 1965], No. 56629/66. Heading C1A. [Also in Division H1] A substrate is coated with silica by heating it at a temperature of 650‹ C. or greater in a carrier gas stream containing 0À0005% to 0À1% by volume SiF 4 and from 20 to 1000 times this amount by volume of H 2 O. The carrier gas may be N 2 , Ar, He, Ne, O 2 , CO 2 , or H 2 or a mixture of these. The preferred amounts are 0À005% to 0À03% by volume SiF 4 and 100 to 400 times this amount by volume of steam, the reaction temperature being 700‹ to 1000‹ C. Three examples of the process are given. The substrates mentioned are silicon, germanium, gallium arsenide, gallium phosphide, aluminium oxide, magnesium oxide and molybdenum. |
