| 摘要 |
1305748 Electrodes for semi-conductor devices DANFOSS AS 10 Sept 1970 [20 Sept 1969] 43409/70 Heading H1K An electrode 3 for a semiconductor device is formed by mixing silver, preferably in paste form, with a readily-oxidizable metal and an activator which, when the mixture is applied to the device and fused, reduces the oxide of the readily-oxidizable metal, such reduction occuring at a temperature lower than that at which fusion is carried out. The readily-oxidizable metal, which may be zinc, lead, tin, indium, aluminium or 25% indium/75% lead, serves to suppress the formation of a deleterious oxide blocking layer during electrode fusion, while the activator, e.g. titanium hydride or zirconium hydride, reduces the oxide skin on the readilyoxidizable metal, thus facilitating the process. In the embodiment the semi-conductor device is BaTiO 3 positive - temperature - coefficient resistor 1. The readily-oxidizable metal and the activator are both preferably in powdered, e.g. colloidal, form when mixed with the silver paste. Preferred compositions and fusion parameters are specified. Finally a wire 4 is soldered to the electrode 3. |
