| 摘要 |
A memory device for memorizing an electric signal. Said memory device has an organic resin film having lead dioxide particles dispersed therein, a positive electrode, and a negative electrode. The memory device has a high electrical resistance state and a low electrical resistance state. An applied electric signal at a critical voltage and with forward polarity can transform the memory device from the high electrical resistance state to the low electrical resistance state. An applied electric erasing signal at a pre-determined voltage with reverse polarity can return the memory device from the low electrical resistance state to the high electrical resistance state. |
