| 摘要 |
PURPOSE:To improve a rate of area in a Schottky diode and make a fine diode by a method wherein the first film made of substance doped with impurity material is formed on an insulation film at a circumference of diode and the impurity material in the film is dispersed on a surface of the semiconductor base board via the second film made of polycrystal silicone. CONSTITUTION:Oxide Si film 2 is formed on a surface of the base board 1, and on this film is further formed a boron.silicate.glass film 3. Then, the films 8 and 2 are selectively removed by chemical etching to form a circular opening 4. Then, on the entire surface of the base board 1 is formed a polycrystal silicon film 5 having no impurity substance doped. Heat treatment is performed to make a boron doped poly Si film 5'. Impurity boron is driven into a surface of the base board 1 through the film 5. |
