| 摘要 |
PURPOSE:To reduce a space occupied by an element by a method wherein a contact opening part in the graft base is made to be a single opening structure. CONSTITUTION:On the base board 1 are formed a collector part 2, a silicone nitride film 4 and a base part 5. After an oxide film 3C is formed on the graft base part 6, the film 4 is removed, nonpure materials are dispersed through the openings A, B to form an emitter part 9 and the nonpure material surface or layer 8. Then, the glass layers of nonpure materials 7a, 7a', 7b, 7b', and 7c are removed by etching to form the contact openings C, D, and F. In accordance with this manufacturing method, all the contact openings are made to be a single contact opening structure, resulting in that a margin between the contact opening part and the dispersion opening part may be eliminated and further an occupation area may be reduced. |
