发明名称 Method of making mask for structuring surface areas
摘要 A mask for structuring surface areas and a method for manufacture thereof. The mask includes at least one metal layer with throughgoing apertures which define the mask pattern and a semiconductor substrate for carrying the metal layer. The semiconductor substrate has throughholes that correspond to the mask pattern. The throughholes in the semiconductor substrate extend from the metal layer-covered surface on the front to at least one tubshaped recess which extends from the other back surface into the semiconductor substrate. Holes are provided in a surface layer in the semiconductor substrate. The surface layer differs in its doping from the rest of the substrate and the holes which are provided in the surface layer have lateral dimensions larger than the apertures in the metal layer so that the metal layer protrudes over the surface layer.
申请公布号 US4417946(A) 申请公布日期 1983.11.29
申请号 US19820376320 申请日期 1982.05.10
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 BOHLEN, HARALD;ENGELKE, HELMUT;GRESCHNER, JOHANN;NEHMIZ, PETER
分类号 H01L21/027;G03F1/00;G03F1/14;G03F1/16;(IPC1-7):H01L21/30;B44C1/22;C03C15/00;C23F1/02 主分类号 H01L21/027
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