| 摘要 |
PURPOSE:To improve the quality of a gate insulating film by gettering the pollutant of photoresist film removing a conductive layer and the gate insulating film at the conductive layer by a method wherein a connecting hole for direct contact is formed by removing a part of conductive layer forming a gate electrode on the gate insulating film of a MISFET as well as the gate insulating film. CONSTITUTION:Impurity (e.g., phosphorus) to reduce resistance value is led to a gate insulating film 4 and a field insulating film 2 to form a polycrystalline silicon film 5a in thickness almost making gettering feasible before the pollutant (e.g., Na<+>) from a photoresist film for etching mask reaches the gate insulating film 4. Next, an etching mask 11 (photoresist film) with a part of source region or drain region opened is formed on a film 5a to remove the film 5a and the film 4 successively by etching process using this mask 1 and then a connecting hole 4A (for direct contact) exposing a semiconductor substrate 1 is formed. Through the connecting hole 4A formed in the gate insulating film 4, an interconnection 5B is connected to be composed of the same conductive layer as that of a gate electrode 4A of other MISFET adjoining the interconnection 5B.
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