| 摘要 |
PURPOSE:To prevent an electrode from hanging, by drawing back an outer rim portion of an upper electrode from an edge of an insolation groove forming pattern in a direction of higher etch rate in element isolation. CONSTITUTION:A semiconductor chip 32 is formed by sequentially epitaxial- growing an n-AlGaInP layer 22, a p-GaInP active layer 23, a p-AlGaInP layer 24, a p-GaAs layer 25 and a p-GaAs cap layer 26 on an n-GaAs substrate 21 in the (100) orientation. Then, a light outputting window 30 is opened in a p-side electrode 29 formed on the upper side of the chip 32. Surrounding four sides of the electrode 29 are formed to be inner by q than surrounding four sides of the chip 32. Corner parts of the electrode 29 are chamfered in a triangular shape. A corner of the chip 32 is at a distance x from the triangularly chamfered edge. Then, isolation grooves 33 in the [010] direction and in the [001] direction are formed in element isolation regions between light emitting elements C, so that each element is isolated. |
