| 摘要 |
PURPOSE:To provide a formation method of an AlGaInN thin film of high quality which has little dislocation and point defects and is suitable for manufacture of a blue-color semiconductor laser element. CONSTITUTION:A carbide layer continuously changing from Si to SiC is formed by setting the revolving speed of a heater on which a substrate is located to 300 rpm or higher, and feeding a methane gas onto an Si substrate 11 heated to 1200 deg.C. The temperature is lowered to less than 600 deg.C, and a GaN non-single crystal 12 20nm thick is formed. Then, a GaN layer 13 is formed with a substrate temperature not lower than 900 deg.C, and an AlGaInN layer 15 for lattice matching with the GaN layer 13 is formed on the GaN layer with a substrate temperature set within a range of 300-900 deg.C. To form the AlGaInN thin film, an alkylamine based material, a hydrazine based material, or a mixture of an alkylamine based material, a hydrazine based material and ammonia, is used as a nitrogen material. Thus, an AlGaInN thin film of high quality with little dislocation and point defects can be formed at low temperatures. |
