MAGNESIUM OXIDE SPUTTERING APPARATUS

摘要

This invention relates to a method and apparatus for high rate reactive sputtering. Particularly, the invention relates to a method and apparatus of sputter depositing reacted metal-compound films where the sputter deposition rate approaches the deposition rate of the unreacted metal. More particularly, the invention relates to an apparatus wherein the sputter deposition target is placed at a greater than usual distance from the substrate and the target metallic erosion track is confined to a narrower width than is typical in current systems.