发明名称 Dual word line decoder for DRAM memory cell array
摘要 The dual word line decoder includes memory cells and sub-word lines arranged in lines and columns. A sub-word line energising unit in a unitary memory cell array processes a main wordline and a sub-word line signal by an AND operation for access to a required memory cell. A first sub-word decoder for a coded address signal transmits several first sub-word line signals, while a second sub-word decoder transmits several second sub-word line signals to each sub-word line energising units in the unitary memory cell array according to the corresponding signals of the sub-word line signals.
申请公布号 DE19816476(A1) 申请公布日期 1998.10.15
申请号 DE19981016476 申请日期 1998.04.14
申请人 LG SEMICON CO., LTD., CHEONGJU, KR 发明人 SIM, JAE KWANG, CHEONGJU, KR;PARK, BYOUNG KWON, SEOUL/SOUL, KR;CHA, IN-HO, SEOUL/SOUL, KR
分类号 G11C11/413;G11C8/10;G11C8/14;G11C11/401;G11C11/407;(IPC1-7):G11C8/00 主分类号 G11C11/413
代理机构 代理人
主权项
地址