发明名称 METHOD FOR FORMING A COPPER FILM ON A SUBSTRATE
摘要 Adhesion of a copper film, such as a copper interconnect (24), to a substrate underlayer, such as a substrate diffusion barrier, is enhanced with adhesion promotion techniques. The adhesion promotion techniques can repair the interface (26) of the copper film and the substrate to enhance adhesion of the copper film for high-yield formation of inlaid copper metal lines and plugs. For instance, thermal annealing of a seed layer, including a copper seed layer, an alloy seed layer or a reactant seed layer, can repair contamination at the interface of the seed layer and the substrate. Alternatively, the adhesion promotion techniques can avoid contamination of the interface by depositing an inert seed layer, such as a noble (e.g., platinum) or passivated metal seed layer, or by depositing the seed layer under predetermined conditions that minimize contamination of the interface, and then depositing a bulk coper layer under predetermined conditions that maximize throughput. Alternatively, the adhesion promotion techniques can avoid the formation of an interface by graduated deposition of a first material and copper.
申请公布号 WO0003420(A3) 申请公布日期 2000.06.29
申请号 WO1999US15583 申请日期 1999.07.09
申请人 CVC, INC. 发明人 PARANJPE, AJIT, P.;MOSLEHI, MEHRDAD, M.;VELO, LINO, A.;OMSTEAD, THOMAS, R.;CAMPBELL, DAVID, R., SR.;LIU, ZEMING;SHANG, GUIHUA
分类号 C23C16/02;C23C16/18;H01L21/768;(IPC1-7):H01L21/285 主分类号 C23C16/02
代理机构 代理人
主权项
地址