发明名称 APPARATUS AND METHOD FOR HEAT TREATMENT
摘要 PROBLEM TO BE SOLVED: To provide a heat treating apparatus capable of controlling the temperature of a substrate to be treated with high accuracy, without picking-up heat except the heat generated from the substrate to be treated as noise. SOLUTION: A sensor insertion hole 21 is bored from the side surface of a heat treatment board 2, in parallel with the surface of the board 2 and directed to the central part of the board 2. A temperature sensor 30 is inserted in the hole 21 and fixed. The tip of the hole 21 is continuously connected with a heat ray inlet hole 22, which is bored from the upper surface of the heat treatment board 2 perpendicularly to the surface of the board 2, and a reflecting part 23 which is inclined at almost 45 degrees with respect to the upper surface of the heat treatment board 2 is formed in a part on which the sensor insertion hole 21 and the heat-ray introducing hole 22 are coupled. Heat ray generated from a wafer W is introduced in the heat ray inlet hole 22, reflected by the reflecting part 23, introduced into the temperature sensor 30 in the sensor inserting hole 21 and then detected.
申请公布号 JP2000286207(A) 申请公布日期 2000.10.13
申请号 JP19990090101 申请日期 1999.03.30
申请人 TOKYO ELECTRON LTD 发明人 YAZAWA MINORU
分类号 H01L21/205;C23C16/56;G01K1/14;H01L21/00;H01L21/26;(IPC1-7):H01L21/26 主分类号 H01L21/205
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