| 摘要 |
<p>An improved manufacturing process and a improved device made by the process are described for forming via interconnects between metal layers in a multi-level metallization structure. An insulating cap layer (54) is deposited on the patterned and etched metal layer (6) before depositing the interlevel dielectric layer (15) above it. A two-step via etch process selectively removes portions of the cap layer (54) within vias prior to via fill.</p> |
