| 摘要 |
PROBLEM TO BE SOLVED: To provide a solid state imaging element and the manufacture thereof whereby the sensitivity to long wavelength lights such as infrared rays can be improved and the dark current is low. SOLUTION: A solid state imaging element has an overflow barrier 12 beneath a sensor having a depletion layer length L1 longer at the center than the depletion layer length L2 at the periphery. A solid state imaging element has a sensor having a second conductivity type semiconductor region 13 formed on the surface of a first conductivity type semiconductor region 12, wherein a second conductivity type semiconductor layer 6 having a less than that of the semiconductor region 13 is formed in the semiconductor region 12 beneath the semiconductor region 13. A solid state imaging element is manufactured in a process having a step of introducing a second conductivity type impurity into a region having a less area than the second conductivity type semiconductor region 13 in the first conductivity type semiconductor region 12 beneath the second conductivity type semiconductor region 13.
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