发明名称 |
SEMICONDUCTOR DEVICE, SEMICONDUCTOR INTEGRATED CIRCUIT AND METHOD FOR MANUFACTURING THE SEMICONDUCTOR DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To prevent a heterojunction bipolar transistor from failing due to surges. SOLUTION: This semiconductor device has a diode 1 and a heterojunction bipolar transistor(HBT) 2. The anode of the diode 1 is connected to an emitter electrode 19 of the HBT 2, the cathode of the diode 1 is connected to a collector electrode 14 of the HBT 2, the emitter of the HBT 2 is connected to an emitter wiring 24, the base is connected to a base wiring 25 and the collector is connected to a collector wiring 26.
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申请公布号 |
JP2000357695(A) |
申请公布日期 |
2000.12.26 |
申请号 |
JP19990169321 |
申请日期 |
1999.06.16 |
申请人 |
NEC CORP |
发明人 |
AZUMA KOJI;HAYAMA NOBUYUKI;GOTO NORIO |
分类号 |
H01L29/73;H01L21/331;H01L27/06;H01L27/082;H01L29/205;H01L29/737;H03K17/0814;(IPC1-7):H01L21/331 |
主分类号 |
H01L29/73 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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