发明名称 SEMICONDUCTOR DEVICE, SEMICONDUCTOR INTEGRATED CIRCUIT AND METHOD FOR MANUFACTURING THE SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To prevent a heterojunction bipolar transistor from failing due to surges. SOLUTION: This semiconductor device has a diode 1 and a heterojunction bipolar transistor(HBT) 2. The anode of the diode 1 is connected to an emitter electrode 19 of the HBT 2, the cathode of the diode 1 is connected to a collector electrode 14 of the HBT 2, the emitter of the HBT 2 is connected to an emitter wiring 24, the base is connected to a base wiring 25 and the collector is connected to a collector wiring 26.
申请公布号 JP2000357695(A) 申请公布日期 2000.12.26
申请号 JP19990169321 申请日期 1999.06.16
申请人 NEC CORP 发明人 AZUMA KOJI;HAYAMA NOBUYUKI;GOTO NORIO
分类号 H01L29/73;H01L21/331;H01L27/06;H01L27/082;H01L29/205;H01L29/737;H03K17/0814;(IPC1-7):H01L21/331 主分类号 H01L29/73
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