发明名称 WIRING FORMING METHOD FOR SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE
摘要 <p>A method for selectively forming metal plating on the surface (2) of a material, comprises the steps of forming a first conductor layer (5) on the surface of the material including a region to be plated, and forming a second conductor layer (6) over the first conductor layer (5) on the surface (2) of the material to be plated so as to cover a region except for the plating region. The first conductor layer (5) has a surface potential such that a first overvoltage is required for depositing a copper series metal (7) from a plating solution; the second conductor layer (6) has a surface potential such that a second overvoltage is required for depositing the copper series metal from a plating solution. The materials of the first and second conductor layers (5,6) are selected so that the second overvoltage is higher than the first overvoltage; for example the first conductor layer (5) is titanium nitride, and the second conductor layer (6) is titanium. The coated material is dipped into the plating solution and plated at an overvoltage higher than the first overvoltage and lower than the second overvoltage, so that the copper series metal (7) is deposited on the exposed plating region of the first conductor layer but not on the second conductor layer. <IMAGE></p>
申请公布号 EP0984485(A4) 申请公布日期 2001.05.23
申请号 EP19980905798 申请日期 1998.03.06
申请人 发明人 TONOMURA, SHOICHIRO;KUNO, TOYOHIKO
分类号 H01L21/288;H01L21/768;H01L23/532;(IPC1-7):H01L21/288 主分类号 H01L21/288
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