发明名称 |
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing semiconductor device which can safely manufacture a high precision circuit wiring without corrosion of a metal film such as an aluminum-based conductive film. SOLUTION: When a photoresist formed on a substrate is peeled, the substrate is cleaned with a rinse agent comprising a water including carbon oxide gas after the photoresist is peeled by a basic peeling liquid. |
申请公布号 |
JP2002162755(A) |
申请公布日期 |
2002.06.07 |
申请号 |
JP20000362355 |
申请日期 |
2000.11.29 |
申请人 |
MITSUBISHI GAS CHEM CO INC |
发明人 |
NANBA SATORU;MARUYAMA TAKEHITO;ABE HISAOKI;AOYAMA TETSUO |
分类号 |
G03F7/42;B08B3/08;G03F7/20;H01L21/027;H01L21/304;H01L21/306;(IPC1-7):G03F7/42 |
主分类号 |
G03F7/42 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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