发明名称 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a method of manufacturing semiconductor device which can safely manufacture a high precision circuit wiring without corrosion of a metal film such as an aluminum-based conductive film. SOLUTION: When a photoresist formed on a substrate is peeled, the substrate is cleaned with a rinse agent comprising a water including carbon oxide gas after the photoresist is peeled by a basic peeling liquid.
申请公布号 JP2002162755(A) 申请公布日期 2002.06.07
申请号 JP20000362355 申请日期 2000.11.29
申请人 MITSUBISHI GAS CHEM CO INC 发明人 NANBA SATORU;MARUYAMA TAKEHITO;ABE HISAOKI;AOYAMA TETSUO
分类号 G03F7/42;B08B3/08;G03F7/20;H01L21/027;H01L21/304;H01L21/306;(IPC1-7):G03F7/42 主分类号 G03F7/42
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