| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method for a field effect transistor which has a long, large-area T-shaped gate. SOLUTION: The manufacturing method for the T-shaped gate has a stage (1) wherein a doped semiconductor substrate composed of a source electrode and a gate electrode is provided, a stage (2) where lower photoresist mechanisms having round shoulders are formed on the source and gate electrodes on the substrate, a state (3) where upper photoresist mechanisms each having an undercut flank, an edge making the part of the round shoulder uncovered, and an edge covering the part of the substrate are formed on the lower photoresist mechanisms, a stage (4) where a gate metal mechanism having an edge extending beyond the substrate and terminating on the round shoulder and an interconnection metal mechanism having an edge which does not extend beyond the substrate are formed on the substrate, and a stage (5) where the lower photoresist mechanisms and upper photoresit mechanisms are removed to form one structure wherein the gate metal mechanism has a flank undercut by the substrate and the interconnection metal mechanism does not have a flank undercut by the substrate. |
