| 摘要 |
PROBLEM TO BE SOLVED: To provide a substrate-cleaning method for improving productivity in substrates, by shortening time required for drying the substrates, and to provide a substrate-cleaning apparatus. SOLUTION: A wafer W is rotated by a wafer-rotating section 10, fluoric acid is supplied onto surfaces Wa and Wb of the wafer W as washing liquid from upper and lower nozzles 64 and 14, and the wafer W is cleaned by the fluoric acid (a cleaning process). Then, HFE used as rinse liquid is supplied onto both the surfaces Wa and Wb of the wafer W from the upper and lower nozzles 64 and 14, and the fluoric acid on the surface of the wafer W is cleaned away (a rinsing process). Finally, nitrogen gas, heated by a gas-heating mechanism 52, is supplied onto both the surfaces Wa and Wb of the wafer W from upper and lower through holes 63 and 13, at the same time, the wafer W is rotated at high speed by a wafer-rotating section 10, and the rinse liquid on the surface of the wafer W is shaken off for drying (a drying process).
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