| 摘要 |
An information recording medium which ensures high reliability and favorable overwrite cycle-ability is provided, even when an interface layer is not provided between a recording layer and a dielectric layer. The recording layer 4 and the dielectric layers 2 and 6 are formed on the surface of the substrate 1. In the recording layer 4, a phase change is generated between a crystal phase and an amorphous phase by irradiation of light or application of an electric energy. The dielectric layers 2 and 6 are Zr/Hf-Cr-O-based material layers comprising at least one of Zr and Hf, Cr and O, preferably consisting essentially of material expressed, for example, with the formula (MO2)N(Cr2O3)100-N (mol %) wherein M is either or both of Zr and Hf, and 20<=N≤80.
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