| 摘要 |
<p>PURPOSE: To form a support beam of silicon in an exposure area of an X-ray exposure mask by implantation of boron ions to reduce a pattern location deformation of the X-ray mask by transformation of a silicon frame. CONSTITUTION: In a manufacture process of an X-ray mask, boron ions 9 are implanted in a portion of an X-ray screen part of a single crystal silicon substrate 4 initially. After a membrane 1 and an X-ray absorber 5 are formed, a resist pattern 6 is formed using a drawer such as EB, and with the use of this resist pattern 6 as a mask, the X-ray absorber 5 is etched to form an X-ray absorber pattern 2. Thereafter, when an exposure area of the single crystal silicon substrate 4 is removed by wet etching with alkali dissolved liquid, the silicon in the portion where the boron ions are implanted is left as a silicon support beam, to suppress a pattern location deformation of an X-ray exposure mask by transformation of a silicon frame 3.</p> |
