| 摘要 |
A method and system for providing a magnetic memory is described. The method and system include providing a plurality of magnetic storage cells, providing a bit line, providing a plurality of word lines, providing bit line read/write logic, and providing a plurality of switches for the bit line. Each of the magnetic storage cells includes a magnetic storage element capable of being programmed by a write current driven through the magnetic storage element. The bit line corresponds to the magnetic storage cells. Each of the word lines corresponds to a magnetic storage cell of the magnetic storage cells and allows current to flow through the magnetic storage cell. The bit line read/write logic corresponds to the bit line. The switches are for the bit line and controlled by the bit line read/write logic to selectively provide a read current or the write current to the magnetic storage elements.
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