发明名称 Semiconductor device for reducing coupling noise
摘要 Semiconductor devices, semiconductor memory device, or flash memories including a high voltage region including high voltage elements, a low voltage region including low voltage elements, and a switch transistor, such as a low voltage switch transistor, connecting the high voltage region and the high voltage region. The switch transistor reduces or eliminates coupling noise between sense nodes without increasing chip area.
申请公布号 US7190618(B2) 申请公布日期 2007.03.13
申请号 US20040915555 申请日期 2004.08.11
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 BYEON DAE-SEOK
分类号 G11C11/34;G11C5/06;G11C7/18;G11C16/04;G11C16/26 主分类号 G11C11/34
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