发明名称 Dense intermetallic compound layer
摘要 Apparatus and methods of fabricating a bump limiting metallization structure including a two-step bump reflow process that reduces intermetallic compound porosity, increases bump strength, improve die yield, and device reliability. The first step comprises annealing a bump limiting metallurgy and a solder plug at a temperature below the liquidus temperature of the solder plug to form a dense intermetallic compound layer between the solder plug and the bump limiting metallurgy. The second step comprises heating the bump limiting metallurgy and the solder plug at a temperature above the liquidus temperature of the solder plug to form a solder bump.
申请公布号 US7325716(B2) 申请公布日期 2008.02.05
申请号 US20040926115 申请日期 2004.08.24
申请人 INTEL CORPORATION 发明人 DEBELIUS CHRISTOPHER AUGUST;LI JIANXING
分类号 B23K31/02;H01L21/44;H01L23/48 主分类号 B23K31/02
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