| 摘要 |
A susceptor ( 16 ) on which a predetermined target wafer (W) is mounted, and a support table ( 15 ) for supporting the susceptor ( 16 ) are provided at generally the center in a chamber ( 2 ). A process gas supply device ( 4 ) supplies a process gas for processing the wafer (W) into the chamber ( 2 ). A first high-frequency power source ( 5 ) and a second high-frequency power source ( 7 ) generate plasma of the supplied process gas by applying predetermined high-frequency voltages respectively, and process the wafer (W). A dike ( 18 ) having a grounded conductive member ( 18 a) is provided around the support table ( 15 ) and the susceptor ( 16 ), and the generated plasma is thereby confined in the area above the wafer (W) mounted on the susceptor ( 16 ).
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