发明名称 |
Oxide-based thin film transistor, method of fabricating the same, zinc oxide etchant, and a method of forming the same |
摘要 |
Provided is a zinc (Zn) oxide-based thin film transistor that may include a gate, a gate insulating layer on the gate, a channel including zinc oxide and may be on a portion of the gate insulating layer, and a source and drain contacting respective sides of the channel. The zinc (Zn) oxide-based thin film transistor may further include a recession in the channel between the source and the drain, and a zinc oxide-based etchant may be used to form the recession.
|
申请公布号 |
US2008315193(A1) |
申请公布日期 |
2008.12.25 |
申请号 |
US20080149409 |
申请日期 |
2008.05.01 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM CHANG-JUNG;PARK YOUNG-SOO;LEE EUN-HA;PARK JAE-CHUL |
分类号 |
H01L29/22;C09K13/06;C09K13/08;H01L21/34 |
主分类号 |
H01L29/22 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|