发明名称 |
ELECTRICALLY ERASABLE PROGRAMMABLE READ-ONLY MEMORY (EEPROM) DEVICE AND METHODS OF FABRICATING THE SAME |
摘要 |
An EEPROM device includes a device isolation layer disposed at a predetermined region of a semiconductor substrate to define active regions, a pair of control gates crossing the device isolation layers and an active region, a pair of selection gates interposed between the control gates to cross the device isolation layers and the active region and a floating gate and an intergate dielectric pattern stacked sequentially between the control gates and the active region The EEPROM device further includes a gate insulation layer of a memory transistor interposed between the floating gate and the active region and a tunnel insulation layer thinner than the gate insulation layer of the memory transistor and a gate insulation layer of a selection transistor interposed between the selection gates and the active region. The tunnel insulation layer is aligned at one side adjacent to the floating gate.
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申请公布号 |
US2008315289(A1) |
申请公布日期 |
2008.12.25 |
申请号 |
US20080199307 |
申请日期 |
2008.08.27 |
申请人 |
KIM JAE HWANG;YOON SEUNG-BEOM;KOH KWANG-WOOK;LEE CHANG-HUN;KIM SUNG-HO;PARK SUNG-CHUL;KIM JU-RI |
发明人 |
KIM JAE HWANG;YOON SEUNG-BEOM;KOH KWANG-WOOK;LEE CHANG-HUN;KIM SUNG-HO;PARK SUNG-CHUL;KIM JU-RI |
分类号 |
H01L29/00 |
主分类号 |
H01L29/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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