III NITRIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT, METHOD FOR MANUFACTURING THE III NITRIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT, AND LAMP

摘要

Provided is a III nitride semiconductor light emitting element, which has an intermediate layer having excellent orientation characteristics on a substrate, a III nitride semiconductor having excellent crystallinity on the intermediate layer, and has excellent light emitting characteristics and productivity. A method for manufacturing such III nitride semiconductor light emitting element, and a lamp are also provided. In the III nitride semiconductor light emitting element, an intermediate layer (12) composed of at least a III nitride compound is laminated on a substrate (11), and an n-type semiconductor layer (14) having a base layer (14a), a light emitting layer (15) and a p-type semiconductor layer (16) are laminated in sequence on the intermediate layer (12). The crystal structure of the intermediate layer (12) includes a nonorientation component which corresponds to a broad component, in the case where the X-ray rocking curve of the intermediate layer (12) is separated by a peak separation method into the broad component having a half-value width of 720 arcsec or more and a narrow component. The rate of the nonorientation component in the crystal structure of the intermediate layer (12) is 30% or less in an area ratio of the intermediate layer (12).