发明名称 Device for improving amplitude imbalance of on-chip transformer balun
摘要 An on-chip transformer balun includes a primary winding as an input terminal of the on-chip transformer balun, and a secondary winding as an output terminal of the on-chip transformer balun, wherein one of the primary winding and secondary winding is formed of a plurality of metal layers in which a spiral trace portion excluding an underpass is disposed on mutually different layers to have an asymmetrical structure.
申请公布号 US7482904(B2) 申请公布日期 2009.01.27
申请号 US20060540711 申请日期 2006.10.02
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 LEE DONG HYUN;JEON SANG YOON;LEE SEONG SOO;LEE HEUNG BAE;LEE HAI YOUNG;JOO SUNG HO
分类号 H01F5/00;H01F27/28 主分类号 H01F5/00
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