发明名称 |
Device for improving amplitude imbalance of on-chip transformer balun |
摘要 |
An on-chip transformer balun includes a primary winding as an input terminal of the on-chip transformer balun, and a secondary winding as an output terminal of the on-chip transformer balun, wherein one of the primary winding and secondary winding is formed of a plurality of metal layers in which a spiral trace portion excluding an underpass is disposed on mutually different layers to have an asymmetrical structure.
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申请公布号 |
US7482904(B2) |
申请公布日期 |
2009.01.27 |
申请号 |
US20060540711 |
申请日期 |
2006.10.02 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE DONG HYUN;JEON SANG YOON;LEE SEONG SOO;LEE HEUNG BAE;LEE HAI YOUNG;JOO SUNG HO |
分类号 |
H01F5/00;H01F27/28 |
主分类号 |
H01F5/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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