发明名称 |
BODY TIE TEST STRUCTURE FOR ACCURATE BODY EFFECT MEASUREMENT |
摘要 |
A body tie test structure and methods for its manufacture are provided. The transistor comprises a body-tied semiconductor on insulator (SOI) transistor formed in a layer of semiconductor material, the transistor comprising a cross-shaped gate structure with a substantially constant gate length L. An insulating blocking layer enables formation of a spacer region in the layer of semiconductor material separating the source and drain regions from the body tie region. A conductive channel with substantially the same inversion characteristics as the intrinsic transistor body connects the body tie to the intrinsic transistor body through the spacer region.
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申请公布号 |
US2009101976(A1) |
申请公布日期 |
2009.04.23 |
申请号 |
US20070874454 |
申请日期 |
2007.10.18 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
MADHAVAN SRIRAM;CHEN QIANG;CHAN DARIN A.;GOO JUNG-SUK |
分类号 |
H01L27/12;H01L21/8236 |
主分类号 |
H01L27/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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