| 摘要 |
The semiconductor device of the present invention includes: first defensive wiring provided above a diffusion isolation layer formed in a substrate or a well, arranged at a minimum wiring pitch allowable in fabrication to cover the diffusion isolation layer; a plurality of signal wiring layers formed above the first defensive wiring; and means for applying a predetermined signal to the first defensive wiring and capturing a change in an electrical or physical property of the first defensive wiring.
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