| 摘要 |
<p>PURPOSE: To obtain a semiconductor substrate heating holder with which the planar temperature of semiconductor substrate can be heated up uniformly, a wide film-forming area can be obtained on a wafer having desired thickness, and the wafer having desired thickness, and the collection factor of a semiconductor chip can be enhanced. CONSTITUTION: A plurality of gas blow-out holes 1, with which Ar gas is blown out at a small flow rate in the center part on the backside of a wafer 17 and the flow rate becomes larger as going to the outer circumference of the wafer, are provided and a wafer press clamp, which was used before, is not used.</p> |
