| 发明名称 |
HEUSLER ALLOY THIN FILM, MANUFACTURING METHOD OF THE SAME, MAGNETORESISTANCE EFFECT ELEMENT, AND MAGNETIC MEMORY |
| 摘要 |
PROBLEM TO BE SOLVED: To provide a Heusler alloy thin film having a high spin polarization without excessively increasing true heat treatment temperature.SOLUTION: The Heusler alloy thin film whose chemical composition is CoYZ (Y=V, Cr, Mn, Fe, Z=Al, Si, Ga, Ge) is doped with Ag by less than or equal to 5 at.%, and is subjected to heat treatment.SELECTED DRAWING: Figure 3 |
| 申请公布号 |
JP2016134520(A) |
申请公布日期 |
2016.07.25 |
| 申请号 |
JP20150008689 |
申请日期 |
2015.01.20 |
| 申请人 |
NATIONAL INSTITUTE FOR MATERIALS SCIENCE |
发明人 |
SAKURABA YUUYA;BOS SBROJATY;SASAKI YASUHIRO;HONO KAZUHIRO;LI SONGTIAN |
| 分类号 |
H01L43/08;G01R33/09;G11B5/39;H01F10/16;H01F41/18;H01F41/22;H01L21/8246;H01L27/105;H01L29/82;H01L43/10;H01L43/12 |
主分类号 |
H01L43/08 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
