| 摘要 |
The present invention provides an inductively connected plasma processing device capable of forming even plasma density. The inductively connected plasma processing device includes multiple wiring groups comprising a first antenna plate (15) and a second antenna plate (16) which are diverged after connected to a power feed member (17b) at one end and arranged to be parallel with each other, wherein the first antenna plate (15) and the second antenna plate (16) are earthed by being collated at the other end. The first antenna plate (15) includes: an inner antenna plate (15a) connected to the power feed member (17b) at one end; an outer antenna plate (15b) earthed at the other end; and a variable capacitor (15c) installed between the inner antenna plate (15a) and the outer antenna plate (15b). Therefore, a large plasma processing device can form even plasma by the variable capacitor (15c) installed between the inner antenna plate (15a) and the outer antenna plate (15b). |
