发明名称 |
Verfahren zur Herstellung eines Musters und Projektionsbelichtungsapparat |
摘要 |
A novel method of pattern formation and a projection exposure apparatus are disclosed, in which the pupil of a projection lens of the projection exposure apparatus used for forming an LSI pattern or the like has mounted thereon an optical filter having a complex amplitude transmittance distribution expressed substantially as T(r) = cos(2 pi beta r<2> - theta /2) as a function of a radial coordinate r normalized by the maximum radius of the pupil. Alternatively, Fourier transform of a layout pattern drawn on the LSI is obtained, an obtained Fourier transform data is multiplied by cos(2 pi beta f<2> - theta /2 (where f is a spatial frequency, and beta , theta appropriate real numbers), the inverse Fourier transform of the resulting product is taken to produce a pattern, and this pattern or an approximate solution thereof is used as a mask pattern thereby to produce an LSI by exposure. As a result, even when the NA is increased and the wavelength shortened to improve the resolution limit, a large depth of focus and a high image quality are obtained at the same time. It is thus possible to form a pattern of 0.2 to 0.3 mu m by the use of an optical exposure system. <IMAGE> |
申请公布号 |
DE69127054(D1) |
申请公布日期 |
1997.09.04 |
申请号 |
DE1991627054 |
申请日期 |
1991.09.27 |
申请人 |
HITACHI, LTD., TOKIO/TOKYO, JP |
发明人 |
FUKUDA, HIROSHI, KOKUNBUNJI-SHI, JP;TERASAWA, TSUNEO, OME-SHI, JP |
分类号 |
G03F1/00;G03F7/20;H01L21/027;H01L21/30 |
主分类号 |
G03F1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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