| 摘要 |
<p>PURPOSE:To obtain the high light transmittance thin-film transistor (TFTR) substrate with easy working without requiring reference wiring electrodes by adopting the structure to electrically connect the (n-1)th reference electrode to the n-th gate wiring electrode. CONSTITUTION:Gate electrodes 1 and the gate wiring electrodes (scanning electrodes) 2 are formed by the same stage and a gate insulating film and a semiconductor film 9 are formed. After the unnecessary parts of the semiconductor film 9 are etched away, the insulating film of contact hole 14 parts is removed. The drain electrodes 3, the reference electrodes 4 and the source electrodes 5 are thereafter formed by the same stage and further, display electrodes 6 are formed to constitute the TFTR substrate. The (n-1)th reference electrode 4 counted in the direction of the gate wiring electrodes (scanning electrodes) 2 of this TFTR substrate is directly electrically connected to the n-th gate wiring electrode 2. The need for the reference wiring electrodes is eliminated in this way and the TFTR substrate which allows easy working and has high light transmittance is obtd.</p> |
