PRODUCTION OF P-DOPED ZONES IN SEMICONDUCTOR MONOCRYSTALS,申请号CAD887345-传众专利搜索

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发明名称	PRODUCTION OF P-DOPED ZONES IN SEMICONDUCTOR MONOCRYSTALS
摘要
申请公布号	CA887345(A)	申请公布日期	1971.11.30
申请号	CAD887345	申请日期
申请人	SIEMENS AKTIENGESELLSCHAFT	发明人	ERICH PAMMER;HORST PANHOLZER
分类号		主分类号
代理机构		代理人
主权项
地址

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