Doped semiconductor rod - produced by rotation close to hf heated dopant followed by zone melting

摘要

In process for crucible free prodn. of doped silicon rotatable semiconductor rod is induction heated in a vacuum close to a vaporisable rod of a dopant. Vapour deposition to a depth of 5 mu is followed by zone melting in an argon atmosphere; a seed crystal is fused to the bottom of the rod and the polycrystalline rod is transferred to a monocrystalline state. For doping Si rods pures As, Sb, Al, Ag, Au, Ni, Cu or Mn are used or their Si alloys.