Electrically programmable MOS read-only memory with isolated decoders

摘要

A programmable and erasable MOS read-only memory employing floating gate memory cells. Unique, compact decoders allow the high voltage programming signal to be fully decoded without exposing the decoding transistors to the high voltage. The memory employs field-effect transistors having four different voltage thresholds. One such device is employed in the sense amplifiers to provide compensation for process variations and another device is used to allow the output buffers to be readily "powered-down".