| 摘要 |
<p>PROBLEM TO BE SOLVED: To enhance the emission efficiency, improve the essential emission strength of a light-emitting layer and enable the emission by the carrier injection by limiting the thickness of this emitting layer to a specified range. SOLUTION: A semiconductor light-emitting element has a light-emitting layer set to 1.5-0.3nm thick. A first buffer layer 2 of 30nm thick is grown at low temp. on a substrate 1, a second buffer layer 3 is grown to 2μm thick, a first clad layer 4 composed of a light absorptive layer to be a first lower clad layer 4A of 0.1μm thick and upper clad layer 4B of 10nm thick is epitaxially grown on the buffer layer 3, an active layer 5 of 1nm thick and second clad layer 14 of 0.1μm thick are epitaxially grown. Thus it is possible to form a carrier injection type light-emitting element and short-wavelength light-emitting element for ultraviolet regions.</p> |
