| 摘要 |
PURPOSE:To obtain a photomask using a blackened chalcogenide film as a light shielding film without using Cr by performing the process of forming a chalcogenide film and a silver film successively on a transparent substrate, performing the process of selective exposure and doping silver in the chacogenide film twice. CONSTITUTION:A film 2 of a chalcogenide compound such as Se-Ge, As-Se-Te is formed on a transparent substrate 1 of soda lime glass or the like, and a silver film 3 is formed on the film 2. Next, a pattern mask 4 is disposed above the film 3, and is exposed (shown by arrows) by using a mercury arc lamp or the like, whereby the silver is doped in te film 2 and the film 2 is blackened 5. Next, the film 3 is etched off with aqua regia or the like, after which the film 2 of the non-exposed parts is removed with an alkali soln. Again, a silver film 6 is applied over the entire surface, after which it is exposed (arrows) from the substrate 1 side, whereby the silver doping of the 2nd time is accomplished. Next, the film 6 is etched off, whereby a chalcogenide film 5 of the sufficiently blackened pattern is obtained. In this way, the superior light shielding mask for production of semiconductors, etc. is obtained. |
